| PART |
Description |
Maker |
| HN2E05J |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| 585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin
585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| ISD1100P ISD1100X ISD1112 ISD1110 ISD1120 ISD1110P |
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时12秒）) 单芯片语音记播放设备（单芯片的持续时12秒）（单片的录音/录音重放器（一片信息存储持续时12秒）
Single-Chip Voice Record/Playback Devices 10- and 12-Second Durations(单片声音录音/回放芯片(单片信息存储持续时间12秒钟))
Single-Chip Voice Record/Playback Device（Single-chip Durations of 10 seconds)(单片的录录音重放一片信息存储持续时0秒）)
Single-Chip Voice Record/Playback Device（Single-chip Durations of 12 seconds)(单片的录录音重放一片信息存储持续时2秒）)
SINGLE CHIP VOICE RECORD / PLAYBACK DEVICES
RES POWER .360 OHM 1W 5% SMT
|
List of Unclassifed Manufacturers
Winbond Electronics, Corp.
Winbond Electronics Corp
ETC
Electronic Theatre Controls, Inc.
|
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SYS32256LK-30 SYS32256ZK-30 SYS32256LKLI-30 SYS322 |
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, ZMA64 PLASTIC, ZIP-64
|
TE Connectivity, Ltd.
|
| P1200SL P2000SL |
LCAS Asymmetrical Discrete Device
|
Littelfuse
|
| MT2LSYT3272B2G-12L MT4LSYT6472B2G-12L |
32K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
64K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
|
RECOM Electronic GmbH
|
| CS201212-5R6K CS201212-4R7K CS201212-R15K CS201212 |
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 5600000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 4700000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 150000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 3300000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 820000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 680000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 180000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 68000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Ferrite Multi-Layer Chip Inductors 1 ELEMENT, 33000000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
|
