| PART |
Description |
Maker |
| EM680FU16A EM680FU16A-45LF EM680FU16A-55LF EM680FU |
Low Power, 512Kx16 SRAM
|
Emerging Memory & Logic Solutions Inc
|
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| KM23V8100D |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6T8016C3M K6T8016C3M-B K6T8016C3M-F K6T8016C3M-RB |
512Kx16 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
| WSF512K16-70H2C WSF512K16-90G2C WSF512K16-90H2C |
512KX16 SRAM/FLASH MODULE, SMD 5962-96901 512KX16的SRAM /闪存盘，贴片5962-96901
|
Electronic Theatre Controls, Inc.
|
| HY62UF08401C HY62UF08401C-DSI HY62UF08401C-I HY62U |
Super Low Power Slow SRAM - 4Mb
High Speed, Super Low Power and 4Mbit Full CMOS SRAM
|
Hynix Semiconductor
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPD29F800ALGZ-C15B-MJH UPD29F800ALGZ-C15T-MJH UPD2 |
XWAY™ TANTOS
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES Information | Information[10/2002]
EEPROM|FLASH|512KX16/1MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 512KX16/1MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
NEC, Corp.
3M Company
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| AS6VA5128-BI AS6VA5128 AS6VA5128-BC |
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
2.7V to 3.3V 512K × 8 Intelliwatt low-power CMOS SRAM(2.7V 3.3V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM 2.7V.3V12k × 8 Intelliwatt低功耗CMOS SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Alliance Semiconductor Corporation
|
