| PART |
Description |
Maker |
| SSF3416 |
High Power and current handing capability
|
Silikron Semiconductor ...
|
| SSF32E0E |
High Power and current handing capability
|
Silikron Semiconductor ...
|
| GDSSF2300B-15 |
GENERAL FEATURES
High Power and current handing capability
|
GOOD-ARK Electronics
|
| LP9435ET1G |
High Power and current handing capability Lead free product is acquired
|
Leshan Radio Company
|
| 2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A)
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
High-current gain Power Transistor(60V/ 3A)
High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
| BTS840S2 BTS840-S2 |
Smart High Side Switches - 5,0-34V, 2x30mΩ Limit(scr) 24A DSO-20-12
Smart High-Side Power Switch Two Channels: 2 x 30m Current Sense
Smart High-Side Power Switch Two Channels: 2 x 30mз Current Sense
|
INFINEON[Infineon Technologies AG]
|
| FS100UM-03 |
100 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
Bench Power Supply; Output Voltage:30V; Output Current:3A; Number of Outputs:3; Calibrated:Yes; Certificate of Calibration:Yes; Output Current 2:.5A; Output Current 3:.5A; Output Voltage 2:12V; Output Voltage 3:5V
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State
GESS[GE Solid State]
ETC
|
| 2N6496 2N5039 2N5038 |
HIGH-CURRENT, HIGH-POWER HIGH-SPEED SILICON N-P-N PLANAR TRANSISTORS
|
GESS[GE Solid State]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
