PART |
Description |
Maker |
LCL1803-L |
MCM LNA
|
RFHIC
|
LCL0402-L LCL0902-L |
MCM LNA
|
RFHIC
|
89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位)低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
79C0832XPQK-15 79C0832XPQK-20 79C0832RPQE-20 79C08 |
INDUCTOR SHIELDED 10UH SMD 8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 200 ns, QFP96 8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 150 ns, QFP96
|
Maxwell Technologies, Inc
|
79C0408RT4FK-20 79C0408 79C0408RPFE-12 79C0408RPFE |
4 Megabit (512k x 8-bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
79C2040RPFK-20 79C2040 79C2040RPFE-15 79C2040RPFE- |
20 Megabit (512K x 40-Bit) EEPROM MCM
|
MAXWELL[Maxwell Technologies]
|
79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH- |
8 Megabit (256K x 32-Bit) EEPROM MCM
|
Maxwell Technologies ETC[ETC]
|
27C1512TRPDK 27C1512T 27C1512TRPDE 27C1512TRPDH 27 |
512Kb (32K x 16-bit) OTP EPROM MCM
|
MAXWELL[Maxwell Technologies]
|
GLM2121-L GBM1821-L GLM1521-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|
GBM2121-L GBM9021-L |
MCM Linear High Gain Linearity Module
|
RFHIC
|
0640081070 |
Square DIN style die sets used with 300 MCM compression lugs
|
Molex Electronics Ltd.
|
5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 59 |
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped. 512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow. 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|