PART |
Description |
Maker |
HMD32M32M16EG HMD32M32M16EG-5 HMD32M32M16EG-6 |
128Mbyte (32Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
HMD16M64D16EV-5 HMD16M64D16EV-6 |
128Mbyte(16Mx64) EDO Mode 4K/8K Ref. 3.3V, DIMM 168 pin
|
Hanbit Electronics Co.,Ltd
|
K4X1G323PC-FE K4X1G323PC-FG K4X1G323PC-LG |
32Mx32 Mobile DDR SDRAM
|
Samsung semiconductor
|
Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器 High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24 3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http:// SIEMENS A G SIEMENS AG
|
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 4M x 16 Bit 8k EDO DRAM 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HMD4M64D16E HMD4M72D18EG-5 HMD4M72D18EG-6 |
32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HMD1M36M3EG HMD1M36M3EG-6 HMD1M36M3EG-5 |
4Mbyte(1Mx36) 72-pin SIMM EDO with Parity MODE, 1K Ref. 5V 4MbyteMx362引脚平价模式,每1000参考上海药物研究所易都5V
|
Hanbit Electronics Co., Ltd.
|
HMD4M64D16E |
32Mbyte(4Mx64) EDO Mode 4K Ref. 5V, DIMM 168 pin 32Mbyte4Mx64)EDO公司模式4K的参考5V的,内存168
|
Hanbit Electronics Co., Ltd.
|
HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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