PART |
Description |
Maker |
BLF6G10-200RN BLF6G10LS-200RN BLF6G10-200RN-15 |
Power LDMOS transistor BLF6G10-200RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
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NXP Semiconductors N.V.
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
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NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
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NXP Semiconductors N.V.
|
TFF11145HN BLP7G10S-140 BLP7G10S-140G BLS7G3135LS- |
LDMOS S-Band radar power transistor Low phase noise LO generator TFF11126HN/N1<SOT616-1 (HVQFN24)|<<http://www.nxp.com/packages/SOT616-1.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140G<SOT1204 (HSOP4)|<<http://www.nxp.com/packages/SOT1204.html<1<Always Pb-free,; Power LDMOS transistor BLP7G10S-140<SOT1138 (HSOP4F)|<<http://www.nxp.com/packages/SOT1138.html<1<Always Pb-free,; SiGe:C Low Noise High Linearity Amplifier
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NXP Semiconductors N.V.
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MAPL-000978-0075LF MAPL-000978-0075LN MAPL-000978- |
LDMOS Pulsed Power Transistor 75W, 978 MHz, 400μs Pulse, 1% Duty LDMOS Pulsed Power Transistor 75W, 978 MHz, 400楼矛s Pulse, 1% Duty LDMOS Pulsed Power Transistor
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M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
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BLP15M7160P |
Power LDMOS transistor
|
NXP Semiconductors
|
L8711P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G15LS-250PBRN |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G24LS-100 BLF7G24L-100 |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G20-230PRN10 |
Power LDMOS transistor
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NXP Semiconductors
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