| PART |
Description |
Maker |
| LCL1512-L LCL1812-L |
MCM LNA
|
RFHIC
|
| LCL2304-L LCL1904-L |
MCM LNA
|
RFHIC
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| 5962-0151101TXC 5962-0151101QXC 5962-0151101 UT9Q5 |
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 1E4(10krad(Si)).
UT9Q512K32 16Megabit SRAM MCM
UT9Q512K32 16Megabit SRAM MCM
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose none
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose 5E4(50krad(Si)).
|
AEROFLEX[Aeroflex Circuit Technology]
|
| 79C0832XPQK-15 79C0832XPQK-20 79C0832RPQE-20 79C08 |
INDUCTOR SHIELDED 10UH SMD
8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 200 ns, QFP96
8 Megabit (256K x 32-Bit) EEPROM MCM 256K X 32 EEPROM 5V MODULE, 150 ns, QFP96
|
Maxwell Technologies, Inc
|
| 89C1632RPQI25 89C1632RPQI30 89C1632RPQK20 89C1632R |
16 Mbit (512K x 32-bit) MCM SRAM
|
Maxwell Technologies
|
| SKY65146 |
3.5 V Broadband MCM Power Amplifier 806-849 MHz
|
Skyworks Solutions Inc.
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| P0402FC5C P0402FC8C |
5.0V; 250Watts; flip chip array. For cellular phones, MCM boards, wireless communication circuits, IR LEDs, SMART & PCMCIA cards
8.0V; 250Watts; flip chip array. For cellular phones, MCM boards, wireless communication circuits, IR LEDs, SMART & PCMCIA cards
|
Protek Devices
|
| U0406FC05C |
5.0V 250W unbumped flip chip array. For cellular phones, MCM boards, wireless communication circuit, IR LEDs, SMART & PCMCIA cards
|
Protek Devices
|
