| PART |
Description |
Maker |
| UPC2745TB UPC2745TB-E3-A UPC2746TB-E3-A |
3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
California Eastern Labs
|
| UPC2792TB-E3-A UPC2791TB UPC2791TB-E3 UPC2791TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER
|
CEL[California Eastern Labs]
|
| UPC2749TB UPC2749TB-E3 |
3 V/ SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS
|
NEC[NEC]
|
| 2SC5606 2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC
|
| 2SC5012-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
Renesas Electronics Corporation
|
| 2SC5606-T1 2SC5606 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| UPA843TC UPA843TC-T1 |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC[NEC]
NEC Corp.
|
| UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
| NE202930-T1-YFB-A NE202930-15 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SUPER MINIMOLD PACKAGE-3
Silicon NPN Epitaxial High Frequency Transistor
|
Integrated Device Technology, Inc.
Renesas Electronics Corporation
|
| UPC2748TB-E3-A UPC2747TB UPC2747TB-E3-A UPC2748TB |
3 V, SUPER MINIMOLD 900 MHz Si MMIC AMPLIFIER
|
CEL[California Eastern Labs]
|
