| PART |
Description |
Maker |
| TS1GJF150 |
1GB USB2.0 JetFlash垄芒
1GB USB2.0 JetFlash?
|
Transcend Information. Inc.
Transcend Information. ...
|
| TS1GJF130 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJFV30 |
1GB USB2.0 JetFlash鈩30
|
Transcend Information. Inc.
|
| TS1GJFT3 |
1GB USB2.0 JetFlash T3
|
Transcend Information. Inc.
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| TS16GJFV15 |
16GB USB2.0 JetFlash垄芒V15
16GB USB2.0 JetFlash?V15
|
Transcend Information. Inc.
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TS512MJF110 |
512MB USB2.0 JetFlash垄芒110
512MB USB2.0 JetFlash?10
|
Transcend Information. Inc.
|
| TS8GJF220 |
8GB USB2.0 JetFlash垄芒220
8GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
| DOM40KR0032 HFDOM40KR016 DOM40KR1G DOM40KR384 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式.3 / 5.0V工作
|
Hanbit Electronics Co., Ltd.
|
