| PART |
Description |
Maker |
| EN27LN2G08 |
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
|
Eon Silicon Solution In...
|
| K9K2G08U0A |
256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| K522H1HACF-B050 |
2Gb (128M x16) NAND Flash 1Gb (64M x16 ) Mobile DDR SDRAM
|
Samsung semiconductor
|
| K9K4G08U1M K9F2G16U0M K9F2G08U0M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| TS24MP320 TS2GMP320 |
2G/4G x8 Flash Memory
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| MX23J25640 MX23J25640TI-50G MX23J25640TC-50 MX23J2 |
256M-BIT NAND INTERFACE XtraROMTM
|
MXIC
MCNIX[Macronix International]
|
| HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-T |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
