| PART |
Description |
Maker |
| X28HC16J-55 X28HC16SI-55 X28HC16J-90 X28HC16PI-70 |
90NS, 44 PLCC, IND TEMP(FLASH)
x8 EEPROM
120NS, TSOP, COM TEMP(FLASH)
150NS, 44 TSOP, IND TEMP(FLASH)
90NS, TSOP, IND TEMP(FLASH)
70NS, TSOP, IND TEMP, GREEN(FLASH) x8的EEPROM
|
Electronic Theatre Controls, Inc.
|
| AT27C04007 AT27C040-15TC AT27C040-90TU |
4-Megabit
90NS, TSOP, IND TEMP, GREEN(EPROM) 512K X 8 OTPROM, 90 ns, PDSO32
|
ATMEL Corporation
聚兴科技股份有限公司
Atmel, Corp.
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| AM7202A-30/BXA AM7202-80JC AM7202-80RC AM7202-80DC |
45NS, PLCC, IND TEMP(FLASH)
55NS, VSOP, IND TEMP(FLASH)
55NS, TSOP, IND TEMP(FLASH)
120NS, PLCC, COM TEMP(FLASH)
120NS, PLCC, IND TEMP(FLASH)
x9 Asynchronous FIFO X9热卖异步FIFO
55NS, PLCC, IND TEMP(FLASH) X9热卖异步FIFO
45NS, TSOP, IND TEMP(FLASH) X9热卖异步FIFO
|
Weidmuller, Corp.
Rochester Electronics, LLC
|
| EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory
2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution
N.A.
ETC[ETC]
|
| AT27LV512A07 AT27LV512A-55RU AT27LV512A-90JI AT27L |
90NS, SOIC, IND TEMP, GREEN(EPROM) 64K X 8 OTPROM, 55 ns, PDSO28
512K (64K x 8) Low Voltage OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| AT49BV160-90CI AT49BV161T-70TI AT49LV161T-70TI |
70NS, TSOP, IND TEMP(FLASH) 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
聚兴科技股份有限公司
Atmel, Corp.
ATMEL CORP
|
| AT49F008A-90CC AT49F008A-90CI AT49F008A-90TC AT49F |
90ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
70ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
120ns; 50mA; V(in): -0.6 to 6.25V; V(out): -0.6 to 0.6V; 8-megabit (1M x 8/512K x 16) falsh memory
x8 Flash EEPROM x8闪存EEPROM
x8/x16 Flash EEPROM
|
Atmel, Corp.
|
| AT49BV002A-70VI AT49BV002AT-70JI AT49BV002AT-70JU |
70NS, VSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
70NS, PLCC, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
70NS, PLCC, IND TEMP, GREEN(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
70NS, TSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
70NS, VSOP, IND TEMP, ROHS-A(FLASH)
|
Atmel, Corp.
ATMEL CORP
|
| AT27BV040 AT27BV040-12VI AT27BV040-12JI AT27BV040- |
120NS, VSOP, IND TEMP(EPROM) 512K X 8 OTPROM, 120 ns, PDSO32
4-Megabit (512K x 8) Unregulated Battery-Voltage High-Speed OTP EPROM
|
Atmel, Corp.
ATMEL Corporation
|
| AT29LV010A-12TC AT29LV010A-12JI AT29LV010A-20JI AT |
120NS, TSOP, COM TEMP(FLASH) 128K X 8 FLASH 3V PROM, 120 ns, PDSO32
1-megabit (128K x 8) 3-volt Only Flash Memory
|
Atmel, Corp.
ATMEL Corporation
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
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