PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
5082-2271 50822271 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
KDR393S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR393 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR105 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
|
KDR378 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR105S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH FREQUENCY RECTIFICATION)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
RB521ZS-301 |
Schottky Barrier Diode 0.1 A, 30 V, SILICON, SIGNAL DIODE ULTRA SMALL, GMD2, 2 PIN Schottky Barrier Diode
|
Rohm Incon, Inc.
|