PART |
Description |
Maker |
MMBD3004S MMBD3004S-7 MMBD3004 MMBD3004S- |
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE
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Diodes, Inc. DIODES[Diodes Incorporated] http://
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CMPD2005S |
SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES 0.225 A, 350 V, 2 ELEMENT, SILICON, SIGNAL DIODE SMD Switching Diode Dual: High Voltage: In Series
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Central Semiconductor, Corp. Central Semiconductor Corp
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RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching) FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
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MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5245B |
Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 11 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 10 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 8.7 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 7.5 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 4.3 V. Test current 20.0 mA. 3-26V Dual Operational Amplifier, Ta = -40 to 105°C; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 5-30V Single Comparator, Ta = -25 to 85°C- Pb-free; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 2-36V Dual Comparator, Ta= -40 to 125°C; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 0.5A, 5V, 52kHz Buck PWM Switching Regulator; Package: 8 LEAD PDIP; No of Pins: 8; Container: Rail; Qty per Container: 50 表面贴装稳压二极 3-26V Quad Operational Amplifier, Ta= -40 to 105°C - Pb-free; Package: SOIC 14 LEAD; No of Pins: 14; Container: Tape and Reel; Qty per Container: 2500 表面贴装稳压二极 Small Signal Bias Resistor Transistor SC75 NPN 50V; Package: SC-75 (SOT-416) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Ultra High Speed Switching Diode SC88; Package: SC-88/SC70-6/SOT-363 6 LEAD; No of Pins: 6; Container: Tape and Reel; Qty per Container: 3000 Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 6.2 V. Test current 20.0 mA. Surface nount zener diode. 350 mW. Nominal zen. Vltg @ Izt Vz 5.6 V. Test current 20.0 mA. SURFACE MOUNT ZENER DIODES
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Shanghai Lunsure Electronic... Chenyi Electronics CHENYI[Shanghai Lunsure Electronic Tech] 上海朗硕科技有限公司 Shanghai LUNSURE Electronic Technology Co., Ltd. 涓?捣???绉???????? Shanghai Lunsure Electr...
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BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
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Siemens Semiconductor Group SIEMENS AG
|
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
BAR74 Q62702-F704 |
From old datasheet system Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
1SS426 |
Switching diode Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
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