| PART |
Description |
Maker |
| H55S5122DFR-60M H55S5122DFR-75M H55S5122DFR-A3M H5 |
512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| H55S2622JFR-60M H55S2532JFR-60M H55S2622JFR-75M H5 |
256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
|
Hynix Semiconductor
|
| MD4331-DXX |
Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk
|
M-Systems
|
| HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF |
Mobile SDR - 64Mb
|
Hynix Semiconductor
|
| M65KA128AL |
Low Power SDRAMs
|
ST Microelectronics
|
| BD3538F BD3538HFN BD3538F10 |
Termination Regulators for DDR-SDRAMs
|
Rohm
|
| K4N51163QC-ZC36 K4N51163QC-ZC K4N51163QC-ZC25 K4N5 |
512Mbit gDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| CYD36S18V18-167BGXC CYD36S36V18-167BGXC CYD36S36V1 |
FullFlex(TM) Synchronous SDR Dual-Port SRAM; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 2M X 18 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex(TM) Synchronous SDR Dual Port SRAM; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 1M X 36 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 1M X 36 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 256K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 4 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 3.3 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
|
Cypress Semiconductor, Corp.
|
| HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 |
512Mbit Double Data Rate (DDR) Components
|
Infineon
|
