| PART |
Description |
Maker |
| GC4320 GC4321 GC4322 GC4323 |
CONTROL DEVICES High Speed NIP Diodes
|
Microsemi Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| VJ15PA0340 VJ32PA0340 VJ15MA0160 VJ15MA0340 VJ13MA |
Transient Voltage Suppression, ESD Protection Devices & EMI Devices
|
AVX Corporation
|
| FS2VS-12 |
Solid-State Panel Mount Relay; Output Device:SCR; Output Voltage Max:280Vrms; Output Voltage Min:24Vrms; Control Voltage Max:140Vrms; Control Voltage Min:90Vrms; Load Current Max:12A; Switching:Zero Cross RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| 2SA1091 E000470 |
TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3672 |
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TYBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) npn型三重扩散型（高压控制，等离子显示，NIXIE TYBE驱动，阴极射线管亮度控制应用
NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL/ PLASMA DISPLAY/ NIXIE TYBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PK3 PK15 |
Pulstors Resistors for high voltage peak pulsing energy control , high frequency non-inductive
|
Willow Technologies Ltd
|
| AT-220 |
Plastic Packaged Control Devices
|
M/A-COM / Tyco Electronics
|
| IDT72T51543 IDT72T51553 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES
|
IDT
|
| CX380D5 |
Solid-State PC Board Relay; Output Device:SCR; Output Voltage Max:530Vrms; Output Voltage Min:48Vrms; Control Voltage Max:15VDC; Control Voltage Min:4VDC; Load Current Max:5A; Switching:Zero Cross; Operating Voltage Max:530V
|
CRYDOM CORP
|
