PART |
Description |
Maker |
EPC-1300-1.0-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-0.5-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-525-0.5-2 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-3.0-4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-470-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-660-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-880-1.4 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-0.22-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
EPC-1300-1.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MXP22-C |
Multi Element Opto Arrays Monolithic Photodiode Array-Chip
|
MICROSEMI[Microsemi Corporation]
|
S2684-254 |
Si photodiode Photodiode with interference filter for monochromatic light (254 nm) detection
|
Hamamatsu Corporation
|