PART |
Description |
Maker |
IDT71V256S IDT71V256SA15TP IDT71V256SA15PZI IDT71V |
LOW POWER 3.3V CMOS FAST SRAM 256K (32K x 8-BIT) 32K X 8 CACHE SRAM, 12 ns, PDSO28
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
BS62LV256PIP70 BS62LV256PIG55 BS62LV256PIP55 BS62L |
Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 70 ns, PDIP28 Very Low Power CMOS SRAM 32K X 8 bit 32K X 8 STANDARD SRAM, 55 ns, PDIP28
|
BRILLIANCE SEMICONDUCTOR, Inc. Brilliance Semiconducto...
|
BS62LV256SIP55 BS62LV256SC70 BS62LV256SIP70 BS62LV |
Very Low Power CMOS SRAM 32K X 8 bit
|
Brilliance Semiconductor
|
UT62256CPC |
32K X 8 BIT LOW POWER CMOS SRAM
|
UTRON
|
LY62256RL-35LL LY62256RL-35LLE LY62256RL-35LLET LY |
32K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS62LV2565 BS62LV2565DC BS62LV2565DI BS62LV2565JC |
Very Low Power/Voltage CMOS SRAM 32K X 8 bit
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|
GM76U256CLLFW |
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor
|
IC62C256 IC62C256-45T IC62C256-45TI IC62C256-45U I |
70ns; 5V; 32K x 8 low power CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM 45ns; 5V; 32K x 8 low power CMOS static RAM
|
Integrated Circuit Solution... ICSI[Integrated Circuit Solution Inc]
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
T15V256A-85RI T15V256A T15V256A-70D T15V256A-70DI |
32K X 8 LOW POWER CMOS STATIC RAM
|
TMT[Taiwan Memory Technology]
|