| PART |
Description |
Maker |
| BGD906MI BGD906 |
860 MHz, 21.5 dB gain power doubler amplifier
|
Philips
|
| CGD91401 9397-750-08861 CGD914MI |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
|
| BGD812 BGD81201 |
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD814 BGD81401 |
860 MHz, 20 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| BGY888 BGY888-2015 |
860 MHz, 34 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
Philips
|
| MHW8185 |
19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA
|
| MHW8182B |
MHW8182B 860 MHz, 19.1 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| MHW9182 MHW7182 MHW8182 |
18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
