| PART |
Description |
Maker |
| ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 500mA的一（c）|
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 200mA的我（丙
|
Electronic Theatre Controls, Inc.
IDEC, Corp.
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| 2SC4213 E000917 |
FOR MUTING AND SWITCHING APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (FOR MUTING AND SWITCHIG APPLICATIONS)
|
Toshiba Corporation
|
| IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| KTD1302 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO MUTING)
|
KEC(Korea Electronics)
|
| RT2N65M |
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| RT6N230C |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SA1866 |
PNP Epitaxial Planar Silicon Transistor Muting Circuits, Driver Applications
|
SANYO
|
| 2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
|
TOSHIBA
|
| 2SA1955 |
Transistor Silicon PNP Epitaxial Type (PCT process) General Purpose Amplifier Applications Switching and Muting Switch Application
|
TOSHIBA
|
| STK4161X STK4191 STK4191X STK4141X STK4151X STK420 |
2ch./1packge - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02%
2ch /1packge / - Power Supply Built-in Muting Circuit 25W/ch ~ 70W/ch THD=0.02%
2ch./1packge, - Power Supply Built-in Muting Circuit 25W/ch. ~ 70W/ch. THD=0.02% 2ch./1packge-电源内置静噪电路25W/ch70W/ch。总谐波失真\u003d 0.02
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 10uF; Voltage: 450V; Case Size: 12.5x20 mm; Packaging: Bulk
|
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SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
|
