| PART |
Description |
Maker |
| IBMN312164CT3 IBMN312804CT3 |
128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M8Mx 4 I/O x 4 同步动态RAM)
128Mb(4Mbit x 8 I/O x 4 Bank) Synchronous DRAM(128M4Mx 8 I/O x 4 同步动态RAM)
|
IBM Microeletronics
|
| EM488M1644VTB EM488M1644VTB-6F EM488M1644VTB-75F E |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M隆驴4Bank隆驴16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
List of Unclassifed Manufacturers
Eorex Corporation
ETC
|
| EM48AM3244VBA-6FE EM488M3244VBA-6FE EM488M3244VBA- |
128Mb (1M×4Bank×32) Synchronous DRAM
128Mb (1M?4Bank?32) Synchronous DRAM
128Mb (1M】4Bank】32) Synchronous DRAM
|
http://
Eorex Corporation
|
| EM488M1644LBC EM488M1644LBC-6F |
128Mb (2M×4Bank×16) Synchronous DRAM
|
Eorex Corporation
|
| EM484M3244VTC-75F EM484M3244VTC-6F |
128Mb (1M×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| IS45S16800E-6BLA1 IS45S81600E-6TLA1 IS45S81600E-7C |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| IS42S16800E-6TLI IS42S16800E-6TLI-TR |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb SYNCHRONOUS DRAM
|
INTEGRATED SILICON SOLUTION INC
List of Unclassifed Man...
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
