| PART |
Description |
Maker |
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| EBJ10EE8BAWA-8C-E EBJ10EE8BAWA-AE-E EBJ10EE8BAWA-D |
1GB Unbuffered DDR3 SDRAM DIMM
|
Elpida Memory
|
| K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| EBJ10EE8BAFA-8C-E EBJ10EE8BAFA-AE-E EBJ10EE8BAFA-D |
128M X 72 DDR DRAM MODULE, DMA240
1GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
| IS46TR16640ED-125KBLA2 IS46TR16640ED-125KBLA3 IS46 |
128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC
|
Integrated Silicon Solu...
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| H5TQ1G63AFP H5TQ1G83AFP H5TQ1G43AFP H5TQ1G43AFPR-G |
1Gb DDR3 SDRAM
256M X 4 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
128M X 8 DDR DRAM, 0.3 ns, PBGA78 HALOGEN FREE, FPBGA-78
|
Hynix Semiconductor, Inc.
|
| W3EG64128S-AD4 |
1GB - 2x64Mx64 DDR SDRAM UNBUFFERED w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲瓦锁相
|
Electronic Theatre Controls, Inc.
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| MT41J128M16 MT41J512M4 |
DDR3 SDRAM
|
Micon
|
| HY5PS1G431F HY5PS1G431F-C4 HY5PS1G431F-C5 HY5PS1G4 |
1Gb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
