| PART |
Description |
Maker |
| ACY11 ACY14 ACY17 ACY18 ACY19 AC117 AC130 AC126 AC |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1.2A I(C) | TO-1
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | CAN
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | TO-1
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 15V的五（巴西）总裁| 500mA的一（c）|
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 200MA I(C) 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 200mA的我（丙
|
Electronic Theatre Controls, Inc.
IDEC, Corp.
|
| ZXTN25015DFH ZXTN25015DFHTA |
15V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
| ZXTDAM832TC ZXTDAM832 ZXTDAM832TA |
MPPS Miniature Package Power Solutions DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR
|
ZETEX[Zetex Semiconductors]
|
| 2SK427R 2SK427Q 2SK427T 2SK427U |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 1.7MA I(DSS) | SPAK
TRANSISTOR | JFET | N-CHANNEL | 15V V(BR)DSS | 7.3MA I(DSS) | SPAK
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 15V的五（巴西）直| 5mA的我（直）| SPAK
|
Toshiba, Corp.
|
| BDX54 BDX54C BDX54B BDX54A |
8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220
PNP SILICON POWER DARLINGTONS
RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 15V; Output Voltage (Vdc): 05V; Power: 2W; 2W Single and Dual Outputs
|
Power Innovations Ltd
POINN[Power Innovations Limited]
Power Innovations International, Inc.
|
| AD5280BRU200 AD5282BRU200 AD5280 AD5282 AD5280BRU2 |
32-Tap. Nonvolatile. Linear-Taper Digital Potentiometers in SOT23 200K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO14
15V, I2C Compatible Digital Potentiometers
15V Operation Digital Potentiometers
15V I2C Compatible Digital Potentiometers
15V/ I2C Compatible Digital Potentiometers
From old datasheet system
|
Analog Devices, Inc.
AD[Analog Devices]
|
| 2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE.
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| DSS3515M-15 |
15V PNP LOW VCE(sat) TRANSISTOR
|
Diodes Incorporated
|
| IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-ST |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 18A条一（c）|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度（VCES和\u003d 600V电压的Vce（on）典\u003d.4V，@和VGE \u003d 15V的，集成电路\u003d 18A条）
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
