| PART |
Description |
Maker |
| W942508CH-75 |
8M x 4 BANKS x 8 BIT DDR SDRAM 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Winbond Electronics, Corp.
|
| W942516CH W942516CH-75 W942516CH-5 W942516CH-6 |
DDR SDRAM (Double Data Rate)
4M X 4 BANKS X 16 BIT DDR SDRAM
From old datasheet system
|
Winbond Electronics
|
| IC43R16160-7T |
4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
Integrated Circuit Solu...
|
| V58C265804S |
HIGH PERFORMANCE 2.5 VOLT 8M X 8 DDR SDRAM 4 BANKS X 2Mbit X 8 高性能2.5米8 DDR SDRAM银行X 2Mbit的8
|
Mosel Vitelic, Corp.
|
| W9464G6IB |
1M X 4 BANKS X 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6EH0812 |
4 M × 4 BANKS × 16 BITS DDR SDRAM
|
Winbond
|
| W9425G6JB W9425G6JB-5 W9425G6JB-5I |
4 M x 4 BANKS x 16 BITS DDR SDRAM
|
Winbond
|
| W9425G8EH |
8M × 4 BANKS × 8 BITS DDR SDRAM
|
Winbond
|
| V58C265404S |
HIGH PERFORMANCE 2.5 VOLT 16M X 4 DDR SDRAM 4 BANKS X 4Mbit X 4
|
MOSEL[Mosel Vitelic, Corp]
|
| HY5DU56422DTP HY5DU56822DTP HY5DU56822DTP-J HY5DU5 |
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM) 32M X 8 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A |
1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)
|
Elpida Memory
|
