
	Part Number	Hot Search : D13007M NCP1027 SQ15100 S35PF 294006 821F3109 68HC90 M34282E2
	Product Description
	Full Text Search

HY27US08561A - 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

HY27US08561A_4532056.PDF Datasheet

Part No.

HY27US08561A HY27US16561A HY27SS08561A HY27SS16561A HY27SS08561A-FPCP HY27SS08561A-TCP HY27SS08561A-FCP HY27SS08561A-SPCP HY27SS08561A-SMP HY27SS16561A-SMP HY27SS08561A-SCP HY27US08561A-FPIB HY27US08561A-FIS HY27SS16561A-FEP HY27SS08561A-FEP

Description

256Mbit (32Mx8bit / 16Mx16bit) NAND Flash
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48
32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48
32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63
16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

File Size

430.42K / 47 Page

Maker

Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY27US08561M

Maker: HY

Pack: TSOP

Stock: Reserved

Unit price for :

50: $5.08

100: $4.82

1000: $4.57

Email: oulindz@gmail.com

Contact us

Homepage

http://www.hynix.com/eng/

Download

[ HY27US08561A HY27US16561A HY27SS08561A HY27SS16561A HY27SS08561A-FPCP HY27SS08561A-TCP HY27SS08561A- Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ HY27US08561A HY27US16561A HY27SS08561A HY27SS16561A HY27SS08561A-FPCP HY27SS08561A-TCP HY27SS08561A- Datasheet PDF Downlaod from Datasheet.HK

]
[HY27US08561A HY27US16561A HY27SS08561A HY27SS16561A HY27SS08561A-FPCP HY27SS08561A-TCP HY27SS08561A- Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for HY27US08561A ]

[ Price & Availability of HY27US08561A by FindChips.com ]

Full text search : 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, TSOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 9 X 11 MM, 1 MM HEIGHT, FBGA-63 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, USOP1-48 32M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 16M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 12 X 17 MM, 0.65 MM HEIGHT, USOP1-48 32M X 8 FLASH 3.3V PROM, 30 ns, PBGA63 16M X 16 FLASH 1.8V PROM, 35 ns, PBGA63

Related Part Number

PART	Description	Maker
HY27SS08561M HY27US16561M	(HY27xSxx561M) 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash	Hynix Semiconductor
HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF	256Mbit (16Mx16bit) Mobile SDR Memory	Hynix Semiconductor
HY5S5B6GLFP-SE HY5S5B6GLF-H	256Mbit (16Mx16bit) Mobile SDR Memory 16M X 16 SYNCHRONOUS DRAM, 6.5 ns, PBGA54	http:// HYNIX SEMICONDUCTOR INC
HYB25D256800BTL-5A HYB25D256160BT-5A HYB25D256800B	256MBit Double Data Rata SDRAM 256Mbit SDRAM的双倍数据拉	Infineon Technologies AG Infineon Technologies A...
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC	256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns	Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
K4J55323QF-GC14 K4J55323QF-GC16 K4J55323QF-GC15 K4	256Mbit GDDR3 SDRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S	256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL	SAMSUNG[Samsung semiconductor] Samsung Electronic
M65KG256AB8W8	256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM	STMicroelectronics
V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA	256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16 256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16	List of Unclassifed Manufacturers List of Unclassifed Man...
GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F	1.8V, 85ns, 256Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory	Intel

Related keyword From Full Text Search System

HY27US08561A siemens	HY27US08561A Differential	HY27US08561A intersil	HY27US08561A voltage vgs	HY27US08561A noise
HY27US08561A maker	HY27US08561A read	HY27US08561A Pass	HY27US08561A receptacle	HY27US08561A rectifier