| PART |
Description |
Maker |
| THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块)
16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| WEDPND16M72S-200BI WEDPND16M72S-200BM WEDPND16M72S |
200MHz; 2.5V power supply; 16M x 72 DDR SDRAM
250MHz; 2.5V power supply; 16M x 72 DDR SDRAM
266MHz; 2.5V power supply; 16M x 72 DDR SDRAM
|
White Electronic Designs
|
| HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM
16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
| MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA7 |
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
Elpida Memory, Inc.
|
| TC59S1608FT-12 |
CMOS 16M-bit Synchronous DRAM
|
ETC
|
| MN4SV17160BT-10 MN4SV17160BT-80 MN4SV17160BT-90 MN |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
PANASONIC[Panasonic Semiconductor]
|
| AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 |
16M x 72, SDR SDRAM MCP
16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
|
http://
Austin Semiconductor, Inc
Micross Components
|
| W981208BH-8H W981208BH-7 |
4M x 4 BANKS x 8 BIT SDRAM
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
x8 SDRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
