| PART |
Description |
Maker |
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K1B3216BDD |
2Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
SAMSUNG ELECTRONICS
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| HYE18P32160AC-96 HYE18P32160AC HYE18P32160AC-125 H |
32M Synchronous Burst CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| MT45W8MW16BGX |
8MEG X 16 Async/Page/Burst CellularRAM Memory
|
Micron Technology
|
| HYE18P32160AC-125 HYE18P32160AC-15 HYE18P32160ACL9 |
M39012 MIL RF CONNECTOR
32M Synchronous Burst CellularRAM
|
Infineon Technologies A...
Infineon Technologies AG
|
| S71WS512PD0HF3HL0 S71WS512PD0HF3HR0 S71WS512PD0HF3 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM
|
SPANSION[SPANSION]
|
