| PART |
Description |
Maker |
| RA60H4047M111 RA60H4047M1-101 |
400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA30H4047M110 |
400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA45H4047M10 |
400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA30H4047M_06 RA30H4047M RA30H4047M-101 RA30H4047M |
RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA13H4047M |
RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Sem...
|
| RA30H4047M1-101 RA30H4047M111 |
RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA07H4047M-101 RA07H4047M06 RA07H4047M_06 RA07H404 |
RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA07H4047M10 RA07H4047M-101 |
RoHS Compliance ,400-470MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
Broadband Frequency Range
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RFFM6401 RFFM6401PCK-410 RFFM6401SB RFFM6401SR RFF |
3.3V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module
|
RF Micro Devices
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| M57704H 57704H |
450-470MHz 12.5V /13W /FM MOBILE RADIO
450-470MHz 12.5V,13W,FM MOBILE RADIO
450-470MHZ, 12.5V, 13W, FM MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
