| PART |
Description |
Maker |
| 2N6504G 2N650406 2N6667G 2N666705 2N6509TG 2N6504 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60?80 V, 65 W
|
ONSEMI[ON Semiconductor]
|
| TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
From old datasheet system
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
|
| 2SB1588 |
Trans Darlington PNP 150V 10A 3-Pin(3 Tab) TO-3PF
|
New Jersey Semiconductors
|
| MJH11018 MJH11019 MJH11020 MJH11021 MJH11022 MJH11 |
From old datasheet system
15 AMPERE DARLINGTON COMPLEMENTARY SILICON
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
|
ONSEMI[ON Semiconductor]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| MJ10005 ON1967 |
NPN SILICON POWER DARLINGTON TRANSISTORS
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS
From old datasheet system
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Inc
|
| FMMT38A FMMT38B FMMT38C |
SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
NPN Darlington Transistor
|
Zetex Semiconductors
|
| 2SK3338-01 |
TRANS PREBIASED PNP 200MW SOT323
N-CHANNEL SILICON POWER MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
