PART |
Description |
Maker |
EIA1415-8P |
14.4-15.35GHz 8W Internally Matched Power FET
|
Excelics Semiconductor
|
EID1415A1-8 EID1415A1-8NH |
14.40-15.35GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
CHT3029-99F |
DC-35GHz 4 Bit Digital Attenuator
|
United Monolithic Semic...
|
CHR2294 |
25-35GHz Single Side Band Mixer Self biased
|
United Monolithic Semiconductors
|
MAFR-000050-5S4C1T MAFR-000159-5S4C1T MAFR-000200- |
Single Junction Surface Mount Circulator 2.4GHz, 2.6GHz, 3.35GHz, 3.5GHz
|
M/A-COM Technology Solutions, Inc.
|
Q4004LT Q6015LT Q6015LTH Q2010LT Q4015LT Q4015LTH |
Internally Triggered Triacs (4 A to 15 A) Power Driver IC; Driver Type:Sink; Source Output Current Max:600mA; Package/Case:22-DIP; Leaded Process Compatible:Yes; No. of Drivers:8; Output Current Max:600mA; Output Voltage Max:50V; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A5甲) Internally Triggered Triacs (4 A to 15 A) 内部触发双向 A15甲)
|
TECCOR[Teccor Electronics] Littelfuse, Inc. TE Connectivity, Ltd.
|
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET 5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
AGB3309 AGB3309S24Q1 AGB3309_REV_1.0 |
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block 50 High Linearity Low Noise Internally Biased Wideband Gain Block 50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block 50з High Linearity Low Noise Internally Biased Wideband Gain Block From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS 2K-Bit Microwire Serial EEPROM
|
Samsung Semiconductor Co., Ltd. Macronix International Co., Ltd. HIROSE ELECTRIC Co., Ltd. Microchip Technology, Inc. Rohm Co., Ltd. Vicor, Corp. CATALYST[Catalyst Semiconductor] http://
|
MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET 12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC42V4450A C424450A |
From old datasheet system 4.4~5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET 4.4 - 5.0GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|