| PART |
Description |
Maker |
| PS21965-ST |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21965-T |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| STGP20NB60H 6203 |
From old datasheet system
N-CHANNEL 20A - 600V TO-220 PowerMESH TM IGBT
N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STW20NM60 |
N-CHANNEL Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| PS21964-ST |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21964-4A PS21964-4 PS21964-4C PS21964-4W |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21964-S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| 1MBH20D-060 |
600V / 20A Molded Package
|
Fuji Electric
|
| AOK20N60 |
600V,20A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
