| PART |
Description |
Maker |
| EDI8G32512V |
512Kx32 Static RAM CMOS, High Speed Module(512Kx32 高速CMOS静态RAM模块)
|
White Electronic Designs Corporation
|
| WS512K32-45 WS512K32-20 WS512K32-25 WS512K32-17 WS |
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
512Kx32 SRAM Module(512Kx32静态RAM模块（存取时7ns
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????5ns锛?
|
White Electronic Designs Corporation
|
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| WS512K32-XXX EDI8C32512CA |
512Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时5705555ns
512Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块（存取时57055555ns
|
White Electronic Designs Corporation
|
| K4S161622H |
16Mb H-die SDRAM Specification
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
|
Samsung semiconductor
|
| EDI7F433512C80BNC EDI7F433512C100BNC EDI7F433512C1 |
512Kx32 Flash
|
White Electronic Designs Corporation
|
| EDI7F433512V100BNC EDI7F433512V120BNC EDI7F433512V |
512Kx32 FLASH
|
White Electronic Designs Corporation
|
| WS512K32NBV-17H2IE WS512K32NBV-15G2CE WS512K32NBV- |
512Kx32 3.3V SRAM MODULE
|
WEDC[White Electronic Designs Corporation]
|
| BC857C BC856A BC857A BC856B BC857B BC858B BC858C B |
PNP SMALL SIGNAL TRANSISTOR 310MW
High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-PDIP -55 to 125
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counter 16-SOIC -55 to 125
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125
High Speed CMOS Logic Octal D-Type Flip-Flop with Reset 20-SOIC -55 to 125
High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
