PART |
Description |
Maker |
S20GBJ40-C |
Voltage 200V ~800V 20.0Amp Glass Passivited Bridge Rectifiers
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SeCoS Halbleitertechnologie GmbH
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S25GBJ40-C S25GBJ20-C |
Voltage 200V ~800V 25.0Amp Glass Passivited Bridge Rectifiers Voltage 200V ~800V 25.0Amp Glass Passivited Bridge Rectifiers
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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Infineon
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SPP02N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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Infineon
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SPA11N80C3 SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS⑩ Power Transistor
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Infineon Technologies AG
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ERC20M |
FAST RECOVERY DIODE( 200V to 800V / 5A )
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FUJI[Fuji Electric]
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SCD5393 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
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SeCoS Halbleitertechnologie GmbH
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S10GBU80-C S10GBU40-C S10GBU20-C S10GBU60-C S10GBU |
Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers 10.0Amp Glass Passivited Bridge Rectifiers
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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IRF630B IRFS630B IRF630BFP001 IRF630BTSTUFP001 IRF |
200V N-Channel MOSFET 200V N-Channel B-FET / Substitute of IRF630 & IRF630A 200V N-Channel B-FET / Substitute of IRFS630 & IRFS630A
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FAIRCHILD[Fairchild Semiconductor]
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Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五(DRM)的| 40A条口(T)的有效值|18 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 5A条口(T)的有效值|20 TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 4A条口T)的有效值|20 TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 3A条口(T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|20 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五(DRM)的| 40A条口(T)的有效值|18 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|18 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|02 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 700V的五(DRM)的| 25A条口(T)的有效值|20 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|300V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-39 TRIAC|600V V(DRM)|8A I(T)RMS|TO-202 TRIAC|500V V(DRM)|8A I(T)RMS|TO-202 TRIAC|200V V(DRM)|3A I(T)RMS|TO-202 TRIAC|500V V(DRM)|25A I(T)RMS|TO-220 TRIAC|200V V(DRM)|8A I(T)RMS|TO-202 TRIAC|600V V(DRM)|3A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-202 TRIAC|800V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13 TRIAC|500V V(DRM)|15A I(T)RMS|TO-3 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|20A I(T)RMS|TO-220 TRIAC|200V V(DRM)|6A I(T)RMS|TO-220 TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|10A I(T)RMS|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|200V V(DRM)|15A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|500V V(DRM)|12A I(T)RMS|TO-220 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
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Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
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LT1361CS8PBF LT1362CSPBF LT1361CS8TR |
Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C DUAL OP-AMP, 1500 uV OFFSET-MAX, 37 MHz BAND WIDTH, PDSO8 Dual and Quad 50MHz, 800V/µs Op Amps; Package: SO; No of Pins: 16; Temperature Range: 0°C to 70°C QUAD OP-AMP, 1500 uV OFFSET-MAX, 37 MHz BAND WIDTH, PDSO16
|
Linear Technology, Corp.
|
SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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INFINEON[Infineon Technologies AG]
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