| PART |
Description |
Maker |
| SCD5393 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| LT1363CS8TRPBF |
70MHz, 1000V/µs Op Amp; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C OP-AMP, 2000 uV OFFSET-MAX, 50 MHz BAND WIDTH, PDSO8
|
Linear Technology, Corp.
|
| TB154S TB153S |
Voltage 50V ~ 1000V 1.5 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS405M RS407M |
VOLTAGE 50V ~ 1000V 4.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 4GBJ8005 4GBJ801 4GBJ804 4GBJ806 4GBJ810 4GBJ802 4 |
Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| RS807G RS806G RS801G RS802G |
VOLTAGE 50V ~ 1000V 8.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBJ2508 GBJ25005 GBJ2500511 GBJ2510 |
Voltage 50V ~ 1000V 25.0 Amp Glass Passivited Bridge Rectifiers
Voltage 50V ~ 1000V 25.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| SBL20U200F |
Voltage 200V 20.0 Amp Low VF Trench Barrier Schottky Rectifier
|
SeCoS Halbleitertechnol...
|
| SCDS103 SCDS101 SCDS10112 SCDS102 |
Voltage 50V ~ 200V 1.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
