PART |
Description |
Maker |
M21131G-22 M21131G-13 |
72x72/144x144 3.2 Gbps Asynchronous Crosspoint Switch with Amplif-EYE Signal Conditioning
|
M/A-COM Technology Solu...
|
UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65,一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp. NEC Corp.
|
AGR18125E AGR18125EF AGR18125EU |
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
AWB7128 AWB7128P8 |
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
PE6802 PE6802-16 |
0.5 Watts Low Power WR-42 Waveguide Load 18 GHz to 26.5 GHz
|
Pasternack Enterprises,...
|
TPT-13-6036 TPT-13-6026 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TPT-18-6017 TPT-18-6016 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
SST13LP02 SST13LP02-QDF-K SST13LP02-QDF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|