| PART |
Description |
Maker |
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| 16MX16TI DPSD16MX16TY5 |
256 Megabit Synchronous DRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MT42C4064 |
64k*4 dram with 256*4 sam
|
MT
|
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches
256 x 256 Time Slot Interchange Digital Switch, 5.0V
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology
IDT
|
| HYB18H256321AF-12 |
256-Mbit x32 GDDR3 DRAM
|
Infineon
|
| M11B416256A M11B416256A-25J M11B416256A-25T M11B41 |
256 K x 16 DRAM EDO PAGE MODE
|
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
N.A.
ETC
Electronic Theatre Controls, Inc.
|
| IS42S16160C IS42S16160C-6TL IS42S16160C-6TLI IS42S |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| PA-SSD3SM18-28 PA-SSD3SM18-08 PA-SSD3SM18-14 PA-SS |
PLUG PINS ARE SURFACE MOUNT SOLDERED TO THE CIRCUIT BOARD
|
ETC[ETC]
|
