PART |
Description |
Maker |
MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应 From old datasheet system
|
Rohm Co., Ltd. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
MGFS36E2527 MGFS36E252707 |
2.5-2.7GHz HBT HYBRID IC
|
Mitsubishi Electric Sem... Mitsubishi Electric Semiconductor
|
SZM-2066Z |
2.4-2.7GHz 2W Power Amplifier
|
http:// Sirenza Microdevices, Inc
|
SZP-2026Z |
2.2-2.7GHz 2W InGaP Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
SZA2044ZPCK-EVB2 SZA2044ZSQ |
700MHz to 2.7GHz 5V 1W Power Amplifier
|
RF Micro Devices
|