| PART |
Description |
Maker |
| SI6821DQ |
P-Ch, Reduced Qg, Fast Switching MOSFET Schottky Diode
From old datasheet system
P-Channel Reduced Qg / MOSFET with Schottky Diode
P-Channel, Reduced Qg, MOSFET with Schottky Diode P沟道，减Qg和与MOSFET的肖特基二极
|
Vishay Siliconix
Vishay Intertechnology, Inc.
|
| SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V（D-S），Qg，快速开
N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4884DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4888DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
| SI4850EY-T1-GE3 SI4850EY09 |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| KI4300DY |
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| MS-106-1 MS-106-2 MS-106-3 |
Reduced-miniature Reed Sensor
|
Reed Relays and Electronics
|
| IPL65R660E6 |
Reduced board space consumption
|
Infineon Technologies A...
|
