| PART |
Description |
Maker |
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4866DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7882DP |
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI4394DY-T1-E3 SI4394DY SI4394DY-E3 |
N-Channel Reduced Qdg, Fast Switching WFET
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| 120NQ600-1 |
Reduced RFI and EMI
|
Sangdest Microelectroni...
|
| MS-106-1 MS-106-2 MS-106-3 |
Reduced-miniature Reed Sensor
|
Reed Relays and Electronics
|
| DTP4N60 DTU4N60 |
Reduced Gate Drive Requirement
|
DinTek Semiconductor Co,.Ltd
|
| DVCR476.3LF DXT49310.000A20 DXT49310.000A203 DXT49 |
CRYSTALS REDUCED HEIGHT DXT493
|
Dubilier
|
| IPL65R165CFD |
Reduced board space consumption
|
Infineon Technologies A...
|
