| PART |
Description |
Maker |
| DWBW2F7S15 DWBW3F7S15 DWBW3F8S25 DWBW2F8S25 |
Bandsplitters 50 GHz Channel Spacing
|
JDS Uniphase Corporatio...
JDS Uniphase Corporation
|
| JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
| SMN3018-D1D SMN3018-E1D |
SURFACE MOUNT NOISE SOURCE 200 MHZ TO 6.0 GHZ
|
Micronetics, Inc.
|
| NC504SM-28 |
Surface Mount Noise Sources 200 kHz to 3.5 GHz
|
Micronetics, Inc.
|
| NC502SM-12 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
| NC502SM-28 |
Surface Mount Noise Sources 200 kHz to 1 GHz
|
Micronetics, Inc.
|
| AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26125E AGR26125EF AGR26125EU |
125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| IRFBC40 |
CAP CER 1000PF 100V 20% X7R 0603 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2A/ 600V/ 1.200 Ohm/ N-Channel Power MOSFET
6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET
|
Intersil, Corp.
Intersil Corporation
|
| SUM110N08-05 70511 |
N-Channel 75-V (D-S) 200C MOSFET
N-Channel 75-V (D-S) 200∑C MOSFET
N-Channel 75-V (D-S) 200隆?C MOSFET
N-Channel 75-V (D-S) 200°C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PM200CL1A060 |
200 A, 600 V, N-CHANNEL IGBT
Intellimod?/a> L-Series Three Phase IGBT Inverter 200 Amperes/600 Volts
|
POWEREX INC
Powerex Power Semiconductor...
|
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