| PART |
Description |
Maker |
| BAS520-02V BAS520-02V-GS08 BAS520-02V-GS18 |
BAS520-02V
|
Vishay Siliconix
|
| IRG4BC15UD-L IRG4BC15UD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) 绝缘栅双极型晶体管，超快软恢复二极管VCES和\u003d 600V电压的Vce（on）典\u003d 2.02V，@和VGE \u003d 15V的，集成电路\u003d 7.8A
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| S558-10GB02V |
Electrical Specification S558-10GB-02V
|
Bel Fuse Inc.
|
| BAS40-02V-V-G-08 |
BAS40-02V-V-G Small Signal Schottky Diode
|
Vishay Semiconductors
|
| IRG4BC15UD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
|
IRF[International Rectifier]
|
| BZW06P64 BZW06P33 BZW06P33B BZW06P7V0 BZW06-64B BZ |
Diode TVS Single Uni-Dir 273V 600W 2-Pin DO-15
Diode TVS Single Bi-Dir 64.1V 600W 2-Pin DO-15
Diode TVS Single Uni-Dir 64.1V 600W 2-Pin DO-15
Diode TVS Single Bi-Dir 7.02V 600W 2-Pin DO-15
|
New Jersey Semiconductor
|
