PART |
Description |
Maker |
BGA425 Q62702-G0058 Q62702-S497 Q62702-S633 Q62702 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 Ω block LNA / MIX Unconditionally stable) SI-MMIC-AMPLIFIER IN SIEGET 25-TECHNOLOGIE (MULTIFUNCTIONAL CASC. 50 ヘ BLOCK LNA / MIX UNCONDITIONALLY STABLE) From old datasheet system Si-MMIC-Amplifier in SIEGET 25-Technologie Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 block LNA / MIX Unconditionally stable) SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) SIPMOS小信号晶体管P通道增强模式的逻辑电平
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY 32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory From old datasheet system 64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory 170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
UPD42S18165L UPD42S18165LLE-A70 UPD42S18165LG5-A50 |
3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
|
NEC
|
AM29PDL128G80PEI AM29PDL128G70RPEF AM29PDL128G70RP |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIOTM Control
|
AMD[Advanced Micro Devices]
|
AM29PDL128G90 AM29PDL128G AM29PDL128G70 AM29PDL128 |
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
|
SPANSION[SPANSION]
|
AM29BDD160G |
(16 Megabit (1 M x 16-bit/512 K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Wr From old datasheet system
|
AMD Inc
|
D640H60VI |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪
|
Spansion, Inc.
|
AM29DL640H70EEN AM29DL640H55EI AM29DL640H55WHEN AM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory 64兆位米8 4米x 16位).0伏的CMOS只,同步写闪
|
Advanced Micro Devices, Inc.
|