| PART |
Description |
Maker |
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 94302-11 |
50 RF Digital Step Attenuator For Rad-Hard Space Applications 6-bit, 31.5 dB, DC - 4.0 GHz 0 MHz - 4000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.75 dB INSERTION LOSS-MAX
|
Peregrine Semiconductor, Corp.
|
| 2SC5703 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SC5713 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA2056 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SC5755 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
From old datasheet system
|
Toshiba Semiconductor
|
| 2SJ148 |
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
|
TOSHIBA
|
| TPC8206 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| JDP2S01E07 JDP2S01E |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S02AS |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| 1SV128 1SV128TE85LF |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS
|
Toshiba Corporation
|
