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RM20TPM-H02 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

RM20TPM-H02_4356452.PDF Datasheet
 
Part No. RM20TPM-H02 RM20TPM-H RM20TPM-M
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
File Size 35.45K  /  3 Page  

Maker

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor
Part: RM20TPM-2H
Maker: MITSUBIS..
Pack: 模块
Stock: Reserved
Unit price for :
    50: $30.15
  100: $28.65
1000: $27.14

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 Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

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RM20TPM-H02 Bandwidth RM20TPM-H02 circuit RM20TPM-H02 Range RM20TPM-H02 Bipolar RM20TPM-H02 system
RM20TPM-H02 Diode RM20TPM-H02 level converter RM20TPM-H02 planar RM20TPM-H02 Planar RM20TPM-H02 Planar
 

 

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