| PART |
Description |
Maker |
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF5S9070NR1 |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| APT10088HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 11A 0.880 Ohm
|
Advanced Power Technology Ltd.
|
| QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|
| OD-11X11-C |
1 ELEMENT, INFRARED LED, 880 nm TO-46
|
TE Connectivity, Ltd.
|
| OIS-345880 OIS-345880-X-T |
Series 345 - 1206 Sqint-LED 45隆? IR high intensity 880 nm
Series 345 - 1206 Sqint-LED 45° IR high intensity 880 nm
|
OSA Opto Light GmbH
|
| SFH4680 SFH4685 Q65110A1570 Q65110A1571 |
Engwinklige LED im MIDLED-Geh?use (880 nm)
|
OSRAM GmbH
|
| KP-1608SF4C |
NIFRAREDEMITTING DIODES 1.2 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Kingbright, Corp.
|
| TSV632 TSV632AID_DT TSV632AIST TSV632ID_DT TSV632I |
Rail-to-rail input/output 60 μA 880 kHz operational amplifiers
Rail-to-rail input/output 60 楼矛A 880 kHz operational amplifiers
|
STMicroelectronics
|
| AWB7122P8 AWB7122P7 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| AWB7222P9 AWB7222P8 |
1.805 - 1.880 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
