| PART |
Description |
Maker |
| NE57811 NE57811S |
Advanced DDR memory termination power with shutdown 先进的DDR存储器终端电源与关机
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CM3121 CM312102SB CM3121-02SB CM3121-02SH |
Dual Linear Voltage Regulator for DDR-I and DDR-II Memory
|
CALMIRCO[California Micro Devices Corp]
|
| 28F008C3 GT28F160C3B110 GT28F016C3B90 TE28F008C3T1 |
3 VOLT ADVANCED BOOT BLOCK 8- / 16- / 32-MBIT FLASH MEMORY FAMILY
STANDOFF HEX 6-32THR 2.5L ALUM
TVS, 6.5CA, BI, 6.5V, 400W, SMT
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 16 - 32 - Mbit闪存家庭
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 3伏高级启动块8 - 6 - 2 - Mbit闪存家庭
TVS UNIDIRECT 7.5V 400W SMA
|
Intel Corp.
Intel, Corp.
|
| BR34E02NUX-WE2 BR34E02FVT-WTR BR34E02FVT-WE2 |
DDR/DDR2 (For memory module) SPD Memory
|
Rohm
|
| NCP51510MNTWG |
3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4
|
ON Semiconductor
|
| IDTAMB0480 |
ADVANCED MEMORY BUFFER
|
IDT
|
| 313072-002 6402 6400 |
Advanced Memory Buffer
|
Intel Corporation
|
| NCP51190-14 NCP51190MNTAG |
1.5A DDR Memory Termination Regulator
|
ON Semiconductor
|
| SE97B |
DDR memory module temp sensor
|
NXP Semiconductors
|
| PM8908 PM8908TR |
Monolithic buck converter for DDR memory termination
|
STMicroelectronics
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TPS51116 |
Complete DDR & DDR2 Memory Power
From old datasheet system
|
ti
|
