PART |
Description |
Maker |
BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling Schottky Diodes - Low barrier silicon RF Schottky diode for detectors Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
FMW-2204 FMW-24H FMW-24L MPE-24H AW04 AE04 SFPE-64 |
From old datasheet system Schottky Barrier Diodes 10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB Schottky Barrier Diodes 2 A, SILICON, RECTIFIER DIODE Schottky Barrier Diodes 1 A, SILICON, SIGNAL DIODE
|
Sanken Electric Co., Ltd. Sanken Electric Co.,Ltd. http://
|
HSB88WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
NSR0530P2T5G |
Schottky Barrier Diode 30V 0.5A low VF SOD-923 Schottky Diode 0.5 A, 30 V, SILICON, SIGNAL DIODE
|
Rectron Semiconductor
|
Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
HSB226WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
SDM100K30L-7 SDM100K30L08 |
DIODE SCHOTTKY 30V 1.0A SOD323 1 A, 30 V, SILICON, SIGNAL DIODE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
|
Diodes, Inc. Diodes Incorporated
|
HSCH-3486 HSCH3486 |
ZERO BIAS SCHOTTKY DIODE SILICON, ZERO BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor ASI
|
5082-2207 50822207 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE From old datasheet system
|
ASI[Advanced Semiconductor] Advanced Semiconductor, Inc.
|
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|