PART |
Description |
Maker |
FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45 1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
FQU2N90TUAM002 |
N-Channel QFETMOSFET 900V, 1.7A, 7.2
|
Fairchild Semiconductor
|
FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5 N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
IRFBG30 |
1000V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A) HEXFET? Power MOSFET Power MOSFET(Vdss=1000V/ Rds(on)=5.0ohm/ Id=3.1A)
|
IRF[International Rectifier]
|
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流,高电压,1000V , 10A,N沟道,MOS场效应管(高能容量)) 高电流,高电000V0安培N沟道,MOSFET的高能能力(大电流,高电压,1000V0A条,沟道来说,MOS场效应管(高能容量) HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) 500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
AOTF5N100 |
1000V,4A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
AOK5N100 |
1000V,4A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
STY15NA100 5850 |
N-CHANNEL Power MOSFET From old datasheet system N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET
|
STMicroelectronics ST Microelectronics
|