PART |
Description |
Maker |
BB506MFS-TL-E BB506M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1005EMTL-H TBB100511 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
BB503C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB501M BB501 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
|