| PART |
Description |
Maker |
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| S29NS016JPLBFW002 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories
|
SPANSION
|
| M58LW128B150N6T M58LW128B150N1T M58LW128A150N6E M5 |
8M X 16 FLASH 3V PROM, 150 ns, PDSO56
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位Mb x16Mb的X32号，统一座，突发3V电源闪存
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories 128兆位8Mb x16Mb的X32号，统一座，突发3V电源闪存
RECEPTACLE HOUSING, 5WAY
|
ST Microelectronics
STMicroelectronics N.V.
意法半导
|
| M58BW16FT4T3 M58BW32FT4T3 M58BW16FT4T3F M58BW32FT4 |
16 or 32 Mbit (x 32, boot block, burst) 3.3 V supply Flash memories
|
Numonyx B.V
|
| M58BW16F M58BW16FB4T3 M58BW16FB4T3F M58BW16FB4T3T |
16 or 32 Mbit (x32, Boot Block, Burst) 3.3V supply Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58BW016DT7T3FF M58BW016DT7T3FT M58BW016FT7T3FF M5 |
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
|
Numonyx B.V
|
| M58PR512LE M58PR512LE96ZAC5 M58PR512LE96ZAD5 M58PR |
512-Mbit or 1-Gbit (】 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M58LR128HT85ZB5E M58LR128HT85ZB5F |
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
| M58LT256JSB M58LT256JST8ZA6T M58LT256JST8ZA6E M58L |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| BS320GBD4V BS320GTD4V AM29BDS320GBD9VMI AM29BDS320 |
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 32兆位米16位）.8伏，只有同时写，突发模式闪存
32 Megabit (2 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 2M X 16 FLASH 1.8V PROM, 70 ns, PBGA64
|
Spansion Inc.
Spansion, Inc.
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
