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M52S32162A - 1M x 16Bit x 2Banks Synchronous DRAM

M52S32162A_4286868.PDF Datasheet


 Full text search : 1M x 16Bit x 2Banks Synchronous DRAM
 Product Description search : 1M x 16Bit x 2Banks Synchronous DRAM


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M52D32162A-7BG M52D32162A-7TG M52D32162A09 M52D321 1M x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
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ETC
M12S16161A-15T M12S16161A-15TG 512K x 16Bit x 2Banks Synchronous DRAM
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M52D32162A-7.5BG M52D32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 2Banks Synchronous DRAM 2M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
Elite Semiconductor Memory Technology, Inc.
A43L0616AV-5.5 5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
AMIC Technology
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SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
M52D32321A-7BG M52D32321A09 M52D32321A-10BG 512K x 32Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
 
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