PART |
Description |
Maker |
Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS AG
|
BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
INJ0001AU1 INJ0001AM1 INJ0001AX08 INJ0001AC1 INJ00 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
CPH6313 |
P-Channel Silicon MOSFET High-Speed Switching Applications
|
Sanyo Semicon Device
|
RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
HS54097TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H7N1004LM H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
RJL6013DPP RJL6013DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL5014DPP RJL5014DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
H5N2305PF |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation.
|